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AON7400A

Alpha & Omega Semiconductors
Part Number AON7400A
Manufacturer Alpha & Omega Semiconductors
Description 30V N-Channel MOSFET
Published Feb 12, 2020
Detailed Description AON7400A 30V N-Channel MOSFET General Description Product Summary • The AON7400A combines advanced trench MOSFET tech...
Datasheet PDF File AON7400A PDF File

AON7400A
AON7400A

Overview
AON7400A 30V N-Channel MOSFET General Description Product Summary • The AON7400A combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).
This device is suitable for use as a high side switch in SMPS and general purpose applications.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.
5V) • RoHS and Halogen-Free Compliant 100% UIS Tested 100% Rg Tested 30V 40A < 7.
5mΩ < 10.
5mΩ DFN 3x3 EP Top View Bottom View Pin 1 Top View 18 27 36 45 G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C ID IDM Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.
1mH C IDSM IAS, IAR EAS, EAR TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 40 28 100 15 12 27 36 25 10 3.
1 2 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 30 60 4.
2 Max 40 75 5 D S Units V V A A A mJ W W °C Units °C/W °C/W °C/W Rev 4.
0: August 2014 www.
aosmd.
com Page 1 of 6 AON7400A Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V VDS=30V, VGS=0V IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=20A VGS=4.
5V, ID=20A Forward Transconductance VDS=5V, ID=20A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current TJ=55°C TJ=125°C 30 1.
5 100 1.
97 6.
2 9.
4 8.
4 55 0.
7 1 5 1...


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