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AON7404

Alpha & Omega Semiconductors
Part Number AON7404
Manufacturer Alpha & Omega Semiconductors
Description 20V N-Channel MOSFET
Published Nov 20, 2011
Detailed Description AON7404 20V N-Channel MOSFET General Description Product Summary The AON7404 combines advanced trench MOSFET technolo...
Datasheet PDF File AON7404 PDF File

AON7404
AON7404

Overview
AON7404 20V N-Channel MOSFET General Description Product Summary The AON7404 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).
This device is ideal for load switch and battery protection applications.
VDS ID (at VGS=4.
5V) RDS(ON) (at VGS=4.
5V) RDS(ON) (at VGS=2.
5V) 100% UIS Tested 100% Rg Tested 20V 20A < 6mΩ < 7.
5mΩ DFN 3x3_EP Top View Bottom View Pin 1 Top View 18 27 36 45 G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C ID IDM Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.
1mH C IDSM IAS, IAR EAS, EAR TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 20 ±12 40 31 160 20 16 57 162 40 16 3.
1 2 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 30 60 2.
6 Max 40 75 3.
1 D S Units V V A A A mJ W W °C Units °C/W °C/W °C/W Rev 2: Mar.
2011 www.
aosmd.
com Page 1 of 6 AON7404 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 20 V IDSS Zero Gate Voltage Drain Current VDS=20V, VGS=0V TJ=55°C 1 µA 5 IGSS Gate-Body leakage current VDS=0V, VGS= ±12V 100 nA VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 0.
5 1 1.
6 V ID(ON) On state drain current VGS=10V, VDS=5V 160 A RDS(ON) Static Drain-Source On-Resistance VGS=4.
5V, ID=20A TJ=125°C 4.
9 6 6.
2 7.
4 mΩ VGS=2.
5V, ID=18A 5.
8 7.
5 mΩ gFS Forward Transconductance VDS=5V, ID=20A 105 S VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current G 0.
6 1 40 V A...


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