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AON7406

Alpha & Omega Semiconductors
Part Number AON7406
Manufacturer Alpha & Omega Semiconductors
Description 30V N-Channel MOSFET
Published Nov 20, 2011
Detailed Description www.DataSheet.co.kr AON7406 30V N-Channel MOSFET General Description The AON7406 uses advanced trench technology and d...
Datasheet PDF File AON7406 PDF File

AON7406
AON7406


Overview
www.
DataSheet.
co.
kr AON7406 30V N-Channel MOSFET General Description The AON7406 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
This device is suitable for use in SMPS and general purpose applications.
Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.
5V) Typical ESD protection 30V 25A < 17mΩ < 23mΩ HBM Class 2 100% UIS Tested 100% Rg Tested Top View DFN 3x3A Bottom View D Top View S S S G Pin 1 Pin 1 D D D D G S Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Drain Current Avalanche Current C Avalanche energy L=0.
1mH C TC=25° C Power Dissipation B C Maximum 30 ±20 25 15 50 9 7 19 18 16.
7 6.
7 3.
1 2 -55 to 150 Units V V A VGS TC=25° C C TC=100° TA=25° C TA=70° C ID IDM IDSM IAS, IAR EAS, EAR PD PDSM TJ, TSTG A A mJ W W ° C C TC=100° TA=25° C TA=70° C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 30 60 6.
2 Max 40 75 7.
5 Units ° C/W ° C/W ° C/W Rev 5: Dec.
2010 www.
aosmd.
com Page 1 of 6 Datasheet pdf - http://www.
DataSheet4U.
net/ www.
DataSheet.
co.
kr AON7406 Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V TJ=55° C VDS=0V, VGS= ±16V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=9A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.
5V, ID=8A Forward Transconductance Diode Forward Voltage VDS=5V, ID=9A IS=1A,VGS=0V TJ=125° C 1.
2 50 14 20 18 40 0.
75 1 15 600 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 77 50 0.
5 12 VGS=10V, VDS=15V, ID=9A 6 740 110 82 1.
1 15 7.
5 2.
5 3 5 VGS=10V, VDS=15V, RL=1.
67Ω, RGEN=3Ω IF=9A, dI/dt=500A/µs 6 14 3.
5 19 3.
5 8 18 10 22 888 145 115 1.
7 18 9 17 24 2...



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