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AON6982

Alpha & Omega Semiconductors
Part Number AON6982
Manufacturer Alpha & Omega Semiconductors
Description 30V Dual Asymmetric N-Channel MOSFET
Published Mar 25, 2020
Detailed Description AON6982 30V Dual Asymmetric N-Channel MOSFET General Description • Trench Power αMOS Technology • Low RDS(ON) • Low Gat...
Datasheet PDF File AON6982 PDF File

AON6982
AON6982

Overview
AON6982 30V Dual Asymmetric N-Channel MOSFET General Description • Trench Power αMOS Technology • Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.
5V) Q1 30V 50A < 5.
2mΩ < 8.
4mΩ Q2 30V 85A < 2mΩ < 2.
45mΩ Applications • DC/DC Converters in Computing • Isolated DC/DC Converters in Telecom and Industrial 100% UIS Tested 100% Rg Tested Top View DFN5X6D Bottom View G2 S2 S2 S2 PHASE (S1/D2) PIN1 D1 D1 G1 D1 D1 PIN1 Top View PHASE S1/D2 Q2: SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode Orderable Part Number AON6982 Package Type DFN 5x6D Form Tape & Reel Bottom View D1 S1/D2 Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C ID IDM Continuous Drain Current Avalanche Current C TA=25°C TA=70°C Avalanche energy L=0.
01mH C IDSM IAS EAS VDS Spike 10µs VSPIKE TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Max Q1 30 ±20 50 31 100 19 15 38 7 36 21 8 3.
1 2 -55 to 150 Max Q2 30 ±12 85 67 260 31 25 80 32 36 45 18 3.
1 2 Units V V A A A mJ V W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ Q1 30 50 4.
6 Typ Q2 30 50 2.
2 Max Q1 40 65 6 Max Q2 40 65 2.
8 Units °C/W °C/W °C/W Rev.
1.
0: January 2015 www.
aosmd.
com Page 1 of 10 Q1 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS IDSS IGSS VGS(th) RDS(ON) gFS VSD IS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current ID=250µA, VGS=0V VDS=30V, VGS=0V Gate-Body leakage current Gate Threshold Voltage Static Drain...


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