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AON6924

Alpha & Omega Semiconductors
Part Number AON6924
Manufacturer Alpha & Omega Semiconductors
Description N-Channel MOSFET
Published Oct 31, 2013
Detailed Description AON6924 30V Dual Asymmetric N-Channel MOSFET General Description The AON6924 is designed to provide a high efficiency s...
Datasheet PDF File AON6924 PDF File

AON6924
AON6924

Overview
AON6924 30V Dual Asymmetric N-Channel MOSFET General Description The AON6924 is designed to provide a high efficiency synchronous buck power stage with optimal layout and board space utilization.
It includes two specialized MOSFETs in a dual Power DFN5x6A package.
The Q1 “ High Side” MOSFET and the Q2 “Low Side” MOSFET with integrated Schottky have been designed for optimal power efficiency.
The AON6924 is well suited for use in compact DC/DC converter applications.
Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.
5V) Q1 30V 60A <5.
2mΩ <7.
8mΩ Q2 30V 85A <1.
6mΩ <1.
9mΩ 100% UIS Tested 100% Rg Tested DFN5X6A Top View S2 S2 S2 Bottom View G2 (S1/D2) D1 D1 D1 D1 G1 PIN1 PHASE Top View Bottom View Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current C Continuous Drain Current Avalanche Current C Max Q1 30 ±20 60 38 200 15 12 40 80 31 12.
5 2 1.
3 -55 to 150 Max Q2 ±12 85 66 510 28 22 68 231 104 41.
5 2.
2 1.
4 Units V V A VGS TC=25° C TC=100° C TA=25° C TA=70° C ID IDM IDSM IAS, IAR EAS, EAR PD PDSM TJ, TSTG TC=25° C A A mJ W W ° C Avalanche Energy L=0.
1mH C Power Dissipation Power Dissipation B TC=100° C TA=25° C TA=70° C A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A AD Maximum Junction-to-Ambient Maximum Junction-to-Case Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ Q1 25 50 3.
1 Typ Q2 20 45 0.
9 Max Q1 Max Q2 30 25 60 55 4 1.
2 Units ° C/W ° C/W ° C/W Rev 1: April 2011 www.
aosmd.
com Page 1 of 11 Free Datasheet http://www.
datasheet4u.
com/ AON6924 Q1 Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V C TJ=55° VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=20A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.
5V, ID=20A Forward Transconductance Diode ...


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