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AON6908

Alpha & Omega Semiconductors
Part Number AON6908
Manufacturer Alpha & Omega Semiconductors
Description 30V Dual Asymmetric N-Channel MOSFET
Published Aug 25, 2014
Detailed Description AON6908 30V Dual Asymmetric N-Channel MOSFET General Description The AON6908 is designed to provide a high efficiency s...
Datasheet PDF File AON6908 PDF File

AON6908
AON6908


Overview
AON6908 30V Dual Asymmetric N-Channel MOSFET General Description The AON6908 is designed to provide a high efficiency synchronous buck power stage with optimal layout and board space utilization.
It includes two specialized MOSFETs in a dual Power DFN5x6A package.
The Q1 "High Side" MOSFET is desgined to minimze switching losses.
The Q2 "Low Side" MOSFET is an SRFET™ that features low RDS(ON) to reduce conduction losses as well as an integrated Schottky diode with low QRR and Vf to reduce switching losses.
The AON6908 is well suited for use in compact DC/DC converter applications.
Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.
5V) 100% UIS Tested 100% Rg Tested Q1 30V 46A <8.
9mΩ <12.
5mΩ Q2 30V 80A <4.
1mΩ <5.
9mΩ DFN5X6A Top View Bottom View PIN1 Top View Bottom View Absolute Maximum Ratings TA=25° C unless otherwise noted Max Q1 Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Avalanche Current C Avalanche Energy L=0.
1mH C TC=25° C Power Dissipation B Max Q2 30 ±20 80 62 270 17 13.
5 40 80 83 33 2.
1 1.
3 -55 to 150 Units V V A VGS TC=25° C TC=100° C TA=25° C C TA=70° ID IDM IDSM IAS, IAR EAS, EAR PD PDSM TJ, TSTG 46 28 100 11.
5 9 27 36 31 12 1.
9 1.
2 Pulsed Drain Current C A A mJ W W ° C TC=100° C C TA=25° TA=70° C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ Q1 29 56 3.
3 Typ Q2 24 50 1 Max Q1 Max Q2 35 29 67 60 4 1.
5 Units ° C/W ° C/W ° C/W Rev 1: November 2010 www.
aosmd.
com Page 1 of 12 AON6908 Q1 Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V C TJ=55° VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=11.
5A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.
5V, ID=11.
5A Fo...


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