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ISL9V3040D3STV

ON Semiconductor
Part Number ISL9V3040D3STV
Manufacturer ON Semiconductor
Description N-Channel IGBT
Published Apr 1, 2020
Detailed Description ISL9V3040D3STV ECOSPARK) Ignition IGBT 300 mJ, 400 V, N−Channel Ignition IGBT Features • SCIS Energy = 300 mJ at TJ = 2...
Datasheet PDF File ISL9V3040D3STV PDF File

ISL9V3040D3STV
ISL9V3040D3STV

Overview
ISL9V3040D3STV ECOSPARK) Ignition IGBT 300 mJ, 400 V, N−Channel Ignition IGBT Features • SCIS Energy = 300 mJ at TJ = 25°C • Logic Level Gate Drive • This Device is Pb−Free and is RoHS Compliant • AEC−Q101 Qualified and PPAP Capable Applications • Automotive Ignition Coil Driver Circuits • High Current Ignition System • Coil on Plug Applications MAXIMUM RATINGS (TJ = 25°C Unless Otherwise Stated) Parameter Symbol Value Units Collector to Emitter Breakdown Voltage (IC = 1 mA) Emitter to Collector Voltage − Reverse Battery Condition (IC = 10 mA) ISCIS = 14.
2 A, L = 3.
0 mHz, RGE = 1 KW (Note 1), TC = 25°C ISCIS = 10.
6 A, L = 3.
0 mHz, RGE = 1 KW (Note 2), TC = 150°C Collector Current Continuous, at VGE = 4.
0 V, TC = 25°C Collector Current Continuous, at VGE = 4.
0 V, TC = 110°C Gate to Emitter Voltage Continuous Power Dissipation Total, TC = 25°C Power Dissipation Derating, TC > 25°C Operating Junction and Storage Temperature BVCER BVECS ESCIS25 ESCIS150 IC25 IC110 VGEM PD PD TJ, TSTG 400 24 300 170 21 17 ±10 150 1 −55 to 175 V V mJ mJ A A V W W/°C °C Lead Temperature for Soldering Purposes (1/8” from case for 10 s) TL 300 °C Reflow soldering according to JESD020C HBM−Electrostatic Discharge Voltage at100 pF, 1500 W TPKG ESD 260 °C 4 kV CDM−Electrostatic Discharge Voltage at 1W ESD 2 kV Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
1.
Self Clamped inductive Switching Energy (ESCIS25) of 300 mJ is based on the test conditions that is starting TJ = 25°C, L = 3 mHz, ISCIS = 14.
2 A, VCC = 100 V during inductor charging and VCC = 0 V during time in clamp.
2.
Self Clamped inductive Switching Energy (ESCIS150) of 170 mJ is based on the test conditions that is starting TJ = 150°C, L = 3 mHz, ISCIS = 10.
6 A, VCC = 100 V during inductor charging and VCC = 0 V during time in clamp.
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