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ISL9V3040D3S

Unisonic Technologies
Part Number ISL9V3040D3S
Manufacturer Unisonic Technologies
Description N-CHANNEL IGNITION IGBT
Published Feb 25, 2016
Detailed Description UNISONIC TECHNOLOGIES CO., LTD ISL9V3040D3S Insulated Gate Bipolar Transistor 300mJ, 400V, N-CHANNEL IGNITION IGBT ...
Datasheet PDF File ISL9V3040D3S PDF File

ISL9V3040D3S
ISL9V3040D3S

Overview
UNISONIC TECHNOLOGIES CO.
, LTD ISL9V3040D3S Insulated Gate Bipolar Transistor 300mJ, 400V, N-CHANNEL IGNITION IGBT  DESCRIPTION The UTC ISL9V3040D3S is an N-channel ignition Insulated Gate Bipolar Transistor.
It uses UTC’s advanced technology to provide customers with outstanding SCIS capability.
The UTC ISL9V3040D3S is suitable for Coil –On plug applications and Automotive Ignition Coil driver circuits, etc.
 FEATURES * Outstanding SCIS capability * Logic level gate drive  SYMBOL  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package ISL9V3040D3SL-TA3-T ISL9V3040D3SG-TA3-T TO-220 ISL9V3040D3SL-TF3-T ISL9V3040D3SG-TF3-T TO-220F ISL9V3040D3SL-TN3-R ISL9V3040D3SG-TN3-R TO-252 ISL9V3040D3SL-TQ2-T ISL9V3040D3SG-TQ2-T TO-263 ISL9V3040D3SL-TQ2-R ISL9V3040D3SG-TQ2-R TO-263 Note: Pin Assignment: G: Gate C: Collector E: Emitter Pin Assignment 123 GCE GCE GCE GCE GCE Packing Tube Tube Tape Reel Tube Tape Reel ISL9V3040D3SL-TA3-T (1)Packing Type (2)Package Type (3)Green Package (1) T: Tube, R: Tape Reel (2) TA3: TO-220, TF3: TO-220F, TN3: TO-252 TQ2: TO-263 (3) L: Lead Free, G: Halogen Free and Lead Free  MARKING www.
unisonic.
com.
tw Copyright © 2015 Unisonic Technologies Co.
, Ltd 1 of 4 QW-R219-011.
F ISL9V3040D3S Insulated Gate Bipolar Transistor  ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise noted) PARAMETER SYMBOL RATINGS UNIT Collector to Emitter Breakdown Voltage Emitter to Collector Voltage Reverse Battery Condition BVCER BVECS 450 30 V V At Starting TJ=25°C, ISCIS=14.
2A, L=3.
0mHy TJ= 150°C, ISCIS=10.
6A, L=3.
0mHy ESCIS 300 170 mJ mJ Continuous Collector Current TC=25°C TC=110°C IC 21 A 17 A Gate to Emitter Voltage Continuous TO-220/TO-263 VGEM ±10 125 V Power Dissipation Total at TC=25°C TO-220F 41.
6 W TO-252 TO-220/TO-263 PD 125 1 Power Dissipation Derating TC>25°C TO-220F 0.
332 W/°C TO-252 1 Electrostatic Discharge Voltage at 100pF, 1500Ω ESD 4 kV Junction Temperature Stor...


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