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FGH40N60SF

ON Semiconductor
Part Number FGH40N60SF
Manufacturer ON Semiconductor
Description IGBT
Published Apr 1, 2020
Detailed Description IGBT - Field Stop 600 V, 40 A FGH40N60SF Description Using novel field stop IGBT technology, ON Semiconductor’s field st...
Datasheet PDF File FGH40N60SF PDF File

FGH40N60SF
FGH40N60SF

Overview
IGBT - Field Stop 600 V, 40 A FGH40N60SF Description Using novel field stop IGBT technology, ON Semiconductor’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential.
Features • High Current Capability • Low Saturation Voltage: VCE(sat) = 2.
3 V @ IC = 40 A • High Input Impedance • Fast Switching: EOFF = 8 mJ/A • This Device is Pb−Free and is RoHS Compliant Applications • Solar Inverter, UPS, Welder, PFC www.
onsemi.
com C G E EC G COLLECTOR (FLANGE) TO−247−3LD CASE 340CK MARKING DIAGRAM $Y&Z&3&K FGH40N60 SF $Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FGH40N60SF = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2009 February, 2020 − Rev.
2 1 Publication Order Number: FGH40N60SF/D FGH40N60SF ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Description Symbol Ratings Unit Collector to Emitter Voltage Gate to Emitter Voltage Transient Gate−to−Emitter Voltage VCES 600 V VGES ±20 V ±30 Collector Current TC = 25°C IC 80 A Collector Current TC = 100°C 40 A Pulsed Collector Current TC = 25°C ICM (Note 1) 120 A Maximum Power Dissipation TC = 25°C PD 290 W Maximum Power Dissipation TC = 100°C 116 W Operating Junction Temperature TJ −55 to +150 °C Storage Temperature Range Tstg −55 to +150 °C Maximum Lead Temp.
for Soldering Purposes, 1/8” from Case for 5 Seconds TL 300 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
1.
Repetitive rating: Pulse width limited by max.
junction temperature.
THERMAL CHARACTERISTICS Parameter Thermal Resistance, Junction to Case Thermal Resis...


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