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FGH40N60SFD

ON Semiconductor
Part Number FGH40N60SFD
Manufacturer ON Semiconductor
Description IGBT
Published May 2, 2021
Detailed Description IGBT - Field Stop 600 V, 40 A FGH40N60SFDTU, FGH40N60SFDTU-F085 Description Using Novel Field Stop IGBT Technology, ON S...
Datasheet PDF File FGH40N60SFD PDF File

FGH40N60SFD
FGH40N60SFD


Overview
IGBT - Field Stop 600 V, 40 A FGH40N60SFDTU, FGH40N60SFDTU-F085 Description Using Novel Field Stop IGBT Technology, ON Semiconductor’s new series of Field Stop IGBTs offer the optimum performance for Automotive Chargers, Inverter, and other applications where low conduction and switching losses are essential.
Features • High Current Capability • Low Saturation Voltage: VCE(sat) = 2.
3 V @ IC = 40 A • High Input Impedance • Fast Switching • Qualified to Automotive Requirements of AEC−Q101 (FGH40N60SFDTU−F085) • These Devices are Pb−Free and are RoHS Compliant Applications • Automotive Chargers, Converters, High Voltage Auxiliaries • Inverters, PFC, UPS www.
onsemi.
com C G E E C G COLLECTOR (FLANGE) TO−247−3LD CASE 340CK MARKING DIAGRAM $Y&Z&3&K FGH40N60 SFD $Y&Z&3&K FGH40N60 SFDTU © Semiconductor Components Industries, LLC, 2015 February, 2020 − Rev.
3 Industrial Automotive $Y &Z &3 &K FGH40N60SFD, FGH40N60SFDTU = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet.
1 Publication Order Number: FGH40N60SFDTU−F085/D FGH40N60SFDTU, FGH40N60SFDTU−F085 ABSOLUTE MAXIMUM RATINGS Description Symbol Ratings Unit Collector to Emitter Voltage Gate to Emitter Voltage Transient Gate−to−Emitter Voltage VCES VGES 600 V ±20 V ±30 V Collector Current TC = 25°C TC = 100°C IC 80 A 40 A Pulsed Collector Current Maximum Power Dissipation TC = 25°C TC = 25°C TC = 100°C ICM (Note 1) 120 A PD 290 W 116 W Operating Junction Temperature TJ −55 to +150 °C Storage Temperature Range Tstg −55 to +150 °C Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 Seconds TL 300 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
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