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FGH40N60SF

Fairchild Semiconductor
Part Number FGH40N60SF
Manufacturer Fairchild Semiconductor
Description Field Stop IGBT
Published Feb 11, 2012
Detailed Description www.DataSheet.co.kr FGH40N60SF 600V, 40A Field Stop IGBT March 2009 FGH40N60SF 600V, 40A Field Stop IGBT Features • H...
Datasheet PDF File FGH40N60SF PDF File

FGH40N60SF
FGH40N60SF

Overview
www.
DataSheet.
co.
kr FGH40N60SF 600V, 40A Field Stop IGBT March 2009 FGH40N60SF 600V, 40A Field Stop IGBT Features • High current capability • Low saturation voltage: VCE(sat) =2.
3V @ IC = 40A • High input impedance • Fast switching • RoHS compliant tm General Description Using Novel Field Stop IGBT Technology, Fairchild’s new sesries of Field Stop IGBTs offer the optimum performance for Inverter, UPS, SMPS and PFC applications where low conduction and switching losses are essential.
Applications • Inverter, UPS, SMPS, PFC E C G COLLECTOR (FLANGE) Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) PD TJ Tstg TL Description Collector to Emitter Voltage Gate to Emitter Voltage Collector Current Collector Current Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp.
for soldering Purposes, 1/8” from case for 5 seconds @ TC = 25oC @ TC = 100oC @ TC = 25 C @ TC = 25oC @ TC = 100 C o o Ratings 600 ± 20 80 40 120 290 116 -55 to +150 -55 to +150 300 Units V V A A A W W o o o C C C Notes: 1: Repetitive rating: Pulse width limited by max.
junction temperature Thermal Characteristics Symbol RθJC(IGBT) RθJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Typ.
- Max.
0.
43 40 Units o o C /W C /W ©2008 Fairchild Semiconductor Corporation 1 www.
fairchildsemi.
com FGH40N60SF Rev.
A Datasheet pdf - http://www.
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DataSheet.
co.
kr FGH40N60SF 600V, 40A Field Stop IGBT Package Marking and Ordering Information Device Marking FGH40N60SF Device FGH40N60SFTU Package TO-247 Packaging Type Tube Max Qty Qty per Tube 30ea per Box - Electrical Characteristics of the IGBT Symbol Off Characteristics BVCES ∆BVCES ∆TJ ICES IGES TC = 25°C unless otherwise noted Parameter Test Conditions Min.
Typ.
Max.
Units Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250µA Temperature Coefficient of Breakdown Volta...


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