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HGTG12N60A4D

Part Number	HGTG12N60A4D
Manufacturer	ON Semiconductor
Description	N-Channel IGBT
Published	Apr 13, 2020
Detailed Description	SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600 V HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS The HGTG1...
Datasheet	HGTG12N60A4D PDF File

Overview

SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600 V HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS The HGTG12N60A4D, HGTP12N60A4D and HGT1S12N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors.
These devices have the high input impedance of a MOSFET and the low on−state conduction loss of a bipolar transistor.
The much lower on−state voltage drop varies only moderately between 25°C and 150°C.
The IGBT used is the development type TA49335.
The diode used in anti−parallel is the development type TA49371.
This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction l...

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