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HGTG12N60A4D

Fairchild Semiconductor
Part Number HGTG12N60A4D
Manufacturer Fairchild Semiconductor
Description N-Channel IGBT
Published Mar 23, 2005
Detailed Description HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel...
Datasheet PDF File HGTG12N60A4D PDF File

HGTG12N60A4D
HGTG12N60A4D

Overview
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG12N60A4D, HGTP12N60A4D and HGT1S12N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors.
These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.
The much lower on-state voltage drop varies only moderately between 25 oC and 150oC.
The IGBT used is the development type TA49335.
The diode used in anti-parallel is the development type TA49371.
This IGBT is ideal for many high voltage switching applications operating at high frequen...


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