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HGTG12N60A4D

Part Number	HGTG12N60A4D
Manufacturer	Intersil Corporation
Description	N-Channel IGBT
Published	Mar 23, 2005
Detailed Description	HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Data Sheet November 1999 File Number 4697.3 600V, SMPS Series N-Channel IGBT...
Datasheet	HGTG12N60A4D PDF File

Overview

HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Data Sheet November 1999 File Number 4697.
3 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG12N60A4D, HGTP12N60A4D and HGT1S12N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors.
These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.
The much lower on-state voltage drop varies only moderately between 25oC and 150oC.
The IGBT used is the development type TA49335.
The diode used in anti-parallel is the development type TA49371.
This IGBT is ideal for many high voltage switching applications operati...

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