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2N3020

Part Number	2N3020
Manufacturer	Central Semiconductor
Description	NPN Transistor
Published	May 17, 2020
Detailed Description	2N3019 2N3020 NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3019...
Datasheet	2N3020 PDF File

Overview

2N3019 2N3020 NPN SILICON TRANSISTOR w w w.
c e n t r a l s e m i .
c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3019, 2N3020 types are NPN silicon transistors designed for general purpose amplifier applications.
MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Power Dissipation (TC=25°C) Operating and Storage Junction Temperature SYMBOL VCBO VCEO VEBO IC PD PD TJ, Tstg 140 80 7.
0 1.
0 0.
8 5.
0 -65 to +200 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) 2N3019 SYMBOL TEST CONDITIONS MIN MAX ICBO VCB=90V - 10 ICBO VCB=90V, TA=150°C - 10 IEBO VEB=5.
0V - 10 BVCBO IC=100μA 140 - BVCEO IC=30mA 80 - BVEBO IE=100μA 7.
0 - VCE(SAT) IC=150mA, IB=15mA - 0.
2 VCE(SAT) IC=500mA, IB=50mA - 0.
5 VBE(SAT) IC=150mA, IB=15mA - 1.
1 hFE VCE=10V, IC=100μA 50 - hFE VCE=10V, IC=10mA 90 - hFE VCE=10V, IC=150mA 100 300 hFE VCE=10V,...

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