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2N7000

Part Number	2N7000
Manufacturer	NTE
Description	N-Channel MOSFET
Published	May 19, 2020
Detailed Description	2N7000 N−Ch, Enhancement Mode Field Effect Transistor TO−92 Type Package D Features: D High Density Cell Design for Lo...
Datasheet	2N7000 PDF File

Overview

2N7000 N−Ch, Enhancement Mode Field Effect Transistor TO−92 Type Package D Features: D High Density Cell Design for Low RDS(ON) D Voltage Controlled Small Signal Switch D Rugged and Reliable D High Saturation Current Capability G S Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Drain−Source Voltage, VDSS .
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60V Drain−Gate Voltage (RGS  1M), VDGR .
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60V Gate−Source Voltage, Continuous .
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20V Non−Repetitive (tp  50s) .
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40V Maximum Drain Current, Continuous .
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ID.
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200mA Pulsed .
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500mA Maximum Power Dissipation, Derate above 25C .
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400mW 3.
2mW/C Operating Junction Temperature Range, TJ .
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−55 to +150C Storage Temperature Range, Tstg .
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−55 to +150C Thermal Resistance, Junction−to−Ambient, Rth(JA) .
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