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KTX301E

KEC
Part Number KTX301E
Manufacturer KEC
Description EPITAXIAL PLANAR PNP TRANSISTOR
Published May 29, 2020
Detailed Description SEMICONDUCTOR TECHNICAL DATA KTX301E EPITAXIAL PLANAR PNP TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE GENERAL PURPO...
Datasheet PDF File KTX301E PDF File

KTX301E
KTX301E

Overview
SEMICONDUCTOR TECHNICAL DATA KTX301E EPITAXIAL PLANAR PNP TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE GENERAL PURPOSE APPLICATION.
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES Including two(TR, Diode) devices in TESV.
(Thin Extreme Super mini type with 5pin.
) Simplify circuit design.
Reduce a quantity of parts and manufacturing process.
EQUIVALENT CIRCUIT (TOP VIEW) 54 Marking 5 Q1 D1 CType Name 12 3 12 4 Lot No.
hFE Rank 3 MARK SPEC Type Mark KTX301E Q1 hFE Rank : Y CA KTX301E Q1 hFE Rank : GR CB H A A1 CC B B1 1 5 DIM MILLIMETERS A 1.
6 +_ 0.
05 A1 1.
0+_ 0.
05 2 B 1.
6+_ 0.
05 B1 1.
2+_ 0.
05 3 4 C 0.
50 D 0.
2+_ 0.
05 H 0.
5+_ 0.
05 P P J 0.
12+_ 0.
05 P5 1.
D1 ANODE 2.
Q 1 EMITTER 3.
Q 1 BASE 4.
Q 1 COLLECTOR 5.
D1 CATHODE TESV JD MAXIMUM RATINGS (Ta=25 ) TRANSISTOR Q1 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range DIODE D1 CHARACTERISTIC Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (10mS) Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg SYMBOL VRM VR IFM IO IFSM PD Tj Tstg RATING -50 -50 -5 -150 -30 100 150 -55~150 RATING 85 80 300 100 2 150 -55 150 UNIT V V V UNIT V V A 2008.
9.
23 Revision No : 2 1/2 KTX301E ELECTRICAL CHARACTERISTICS (Ta=25 ) TRANSISTOR Q1 CHARACTERISTIC SYMBOL Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance ICBO IEBO hFE (Note) VCE(SAT) fT Cob Noise Figure NF Note) hFE Classification Y(4):120~240, GR:200~400.
TEST CONDITION VCB=-50V, IE=0 VEB=-5V, IC=0 VCE=-6V, IC=-2 IC=-100 , IB=-10 VCE=-10V, IC=-1 VCB=-10V, IE=0, f=1 VCE=-6V, IC=-0.
1 , f=1 , Rg=10 MIN.
- 120 80 - TYP.
- -0.
1 4 1.
0 MAX.
-0.
1 -0.
1 400 -0.
3 7 10 UNIT V dB DIODE D1...


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