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KTX302U

KEC
Part Number KTX302U
Manufacturer KEC
Description EPITAXIAL PLANAR PNP TRANSISTOR
Published May 29, 2020
Detailed Description SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. LOW VOLTAGE HIGH SPEED SWITCHING. FEATURES Including two(TR,...
Datasheet PDF File KTX302U PDF File

KTX302U
KTX302U

Overview
SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION.
LOW VOLTAGE HIGH SPEED SWITCHING.
FEATURES Including two(TR, Diode) devices in USV.
(Ultra Super Mini type with 5 leads) Simplify circuit design.
Reduce a quantity of parts and manufacturing process.
EQUIVALENT CIRCUIT (TOP VIEW) 54 Marking 5 4 D1 Q1 Type Name CF Lot No.
12 MARK SPEC Type Mark 3 KTX302U Q1 hFE Rank : Y CF 123 KTX302U Q1 hFE Rank : GR CH MAXIMUM RATINGS (Ta=25 ) TRANSISTOR Q1 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range DIODE (SBD) D1 CHARACTERISTIC Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (10mS) Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg SYMBOL VRM VR IFM IO IFSM Tj Tstg 2008.
8.
29 Revision No : 2 A A1 CC KTX302U EPITAXIAL PLANAR PNP TRANSISTOR SCHOTTKY BARRIER TYPE DIODE H B B1 1 5 DIM MILLIMETERS A 2.
00+_ 0.
20 2 A1 1.
3+_ 0.
1 B 2.
1+_ 0.
1 3 4D B1 1.
25+_ 0.
1 C 0.
65 D 0.
2+0.
10/-0.
05 G 0-0.
1 H 0.
9+_ 0.
1 T T 0.
15+0.
1/-0.
05 G 1.
D 1 ANODE 2.
Q 1 BASE 3.
Q 1 EMITTER 4.
Q 1 COLLECTOR 5.
D1 CATHODE USV RATING -50 -50 -5 -150 -30 100 150 -55~125 RATING 30 30 300 200 1 125 -55 125 UNIT V V UNIT V V A 1/4 KTX302U ELECTRICAL CHARACTERISTICS (Ta=25 ) TRANSISTOR Q1 CHARACTERISTIC SYMBOL Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance ICBO IEBO hFE (Note) VCE(SAT) fT Cob Noise Figure NF Note) hFE Classification Y:120~240, GR:200~400.
TEST CONDITION VCB=-50V, IE=0 VEB=-5V, IC=0 VCE=-6V, IC=-2 IC=-100 , IB=-10 VCE=-10V, IC=-1 VCB=-10V, IE=0, f=1 VCE=-6V, IC=-0.
1 , f=1 , Rg=10 MIN.
- 120 80 - TYP.
- -0.
1 4 1.
0 MAX.
-0.
1 -0.
1 400 -0.
3 7 10 UNIT V dB DIODE (SBD) D1 CHARACTERISTIC Forward Voltag...


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