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KTX303U

KEC
Part Number KTX303U
Manufacturer KEC
Description EPITAXIAL PLANAR PNP TRANSISTOR
Published May 29, 2020
Detailed Description SEMICONDUCTOR TECHNICAL DATA SWITCHING APPLICATION. LOW VOLTAGE HIGH SPEED SWITCHING. FEATURES Including two(TR, Diode) ...
Datasheet PDF File KTX303U PDF File

KTX303U
KTX303U

Overview
SEMICONDUCTOR TECHNICAL DATA SWITCHING APPLICATION.
LOW VOLTAGE HIGH SPEED SWITCHING.
FEATURES Including two(TR, Diode) devices in USV.
(Ultra Super Mini type with 5 leads) Simplify circuit design.
Reduce a quantity of parts and manufacturing process.
EQUIVALENT CIRCUIT (TOP VIEW) 54 Marking 5 4 D1 Q1 Type Name CI 12 3 123 Lot No.
A A1 CC KTX303U EPITAXIAL PLANAR PNP TRANSISTOR SCHOTTKY BARRIER TYPE DIODE H B B1 1 5 DIM MILLIMETERS A 2.
00+_ 0.
20 2 A1 1.
3+_ 0.
1 B 2.
1+_ 0.
1 3 4D B1 1.
25+_ 0.
1 C 0.
65 D 0.
2+0.
10/-0.
05 G 0-0.
1 H 0.
9+_ 0.
1 T T 0.
15+0.
1/-0.
05 G 1.
D 1 ANODE 2.
Q 1 BASE 3.
Q 1 EMITTER 4.
Q 1 COLLECTOR 5.
D1 CATHODE USV MAXIMUM RATINGS (Ta=25 ) TRANSISTOR Q1 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range DIODE (SBD) D1 CHARACTERISTIC Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (10mS) Junction Temperature Storage Temperature Range 2008.
8.
29 Revision No : 2 SYMBOL VCBO VCEO VEBO IC ICP * PC Tj Tstg SYMBOL VRM VR IFM IO IFSM Tj Tstg RATING -15 -12 -6 -500 -1 100 150 -55~125 RATING 30 30 300 200 1 125 -55 125 UNIT V V A UNIT V V A 1/4 KTX303U ELECTRICAL CHARACTERISTICS (Ta=25 ) TRANSISTOR Q1 CHARACTERISTIC SYMBOL Collector Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage ICBO V(BR)CBO V(BR)CEO Emitter-Base Breakdown Voltage V(BR)EBO DC Current Gain hFE Collector-Emitter Saturation Voltage VCE(SAT) Transition Frequency fT Collector Output Capacitance Cob TEST CONDITION VCB=-15V, IE=0 IE=-10 IC=-1 IE=-10 VCE=-2V, IC=-10 IC=-200 , IB=-10 VCE=-2V, IC=-10 , f=100 VCB=-10V, IE=0, f=1 DIODE (SBD) D1 CHARACTERISTIC Forward Voltage Reverse Current Total Capacitance SYMBOL VF(1) VF(2) VF(3) VF(4) IR CT TEST CONDITION IF=1mA IF=10mA IF=100mA IF=200mA VR=30V VR=0, f=1 MIN.
-15 -12 -...


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