DatasheetsPDF.com

2SK2258

INCHANGE
Part Number 2SK2258
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Sep 2, 2020
Detailed Description isc N-Channel MOSFET Transistor INCHANGE Semiconductor 2SK2258 ·FEATURES ·With TO-3PN packaging ·High speed switching ...
Datasheet PDF File 2SK2258 PDF File

2SK2258
2SK2258

Overview
isc N-Channel MOSFET Transistor INCHANGE Semiconductor 2SK2258 ·FEATURES ·With TO-3PN packaging ·High speed switching ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 1000 VGSS Gate-Source Voltage ±30 ID Drain Current-Continuous 4 IDM Drain Current-Single Pulsed 16 PD Total Dissipation 100 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 0.
83 40 UNIT ℃/W ℃/W isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor INCHANGE Semiconductor 2SK2258 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 1mA 1000 V VGS(th) Gate Threshold Voltage VDS=±30V; ID=0.
25mA 2.
5 3.
5 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID=2A 2.
7 3.
6 Ω IGSS IDSS VSDF Gate-Source Leakage Current Drain-Source Leakage Current Diode forward voltage VGS= ±30V;VDS= 0V VDS= 1000V; VGS= 0v;Tj=25℃ Tj=125℃ ISD=4A, VGS = 0 V ±0.
1 μA 500 1000 μA 1.
65 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended for usage in general electronic equipment.
The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.
Please contact us if you intend our pro...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)