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2SK2203

Hitachi Semiconductor
Part Number 2SK2203
Manufacturer Hitachi Semiconductor
Description Silicon N-Channel MOS FET
Published Mar 30, 2005
Detailed Description 2SK2203 Silicon N-Channel MOS FET ADE-208-139 1st. Edition Application High speed power switching Features • • • • • ...
Datasheet PDF File 2SK2203 PDF File

2SK2203
2SK2203

Overview
2SK2203 Silicon N-Channel MOS FET ADE-208-139 1st.
Edition Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC-DC converter Outline TO-3PFM D G 1 2 3 S 1.
Gate 2.
Drain 3.
Source 2SK2203 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes 1.
PW ≤ 10 µs, duty cycle ≤ 1 % 2.
Value at Tc = 25 °C 3.
Value at Tch = 25 °C, Rg ≥ 50 Ω Symbol VDSS VGSS ID I D(pulse)* I DR I AP * 3 3 2 1 Ratings 60 ±20 50 200 50 50 214 60 150 –55 to +150 Unit V V A A A A mJ W °C °C EAR* Pch* Tch Tstg 2 2SK2203 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min 60 ±20 — — 1.
0 — — Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1.
Pulse Test |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 40 — — — — — — — — — Typ — — — — — 0.
007 0.
009 65 8330 3500 550 50 270 1400 560 0.
95 150 Max — — ±10 250 2.
25 0.
01 0.
013 — — — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns I F = 50 A, VGS = 0 I F = 50 A, VGS = 0, diF / dt = 50 A / µs Test conditions I D = 10 mA, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 50 V, VGS = 0 I D = 1 mA, VDS = 10 V I D = 25 A VGS = 10 V*1 I D = 25 A VGS = 4 V*1 I D = 25 A VDS = 10 V*1 VDS = 10 V VGS = 0 f = 1 MHz I D = 25 A VGS = 10 V RL = 1.
2 Ω Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance VGS(off) RD...


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