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2SK2211

Panasonic Semiconductor
Part Number 2SK2211
Manufacturer Panasonic Semiconductor
Description Silicon N-Channel MOS FET
Published Mar 30, 2005
Detailed Description Silicon MOS FETs (Small Signal) 2SK2211 Silicon N-Channel MOS FET Unit : mm For switching 2.6±0.1 4.5±0.1 1.6±0.2 1....
Datasheet PDF File 2SK2211 PDF File

2SK2211
2SK2211

Overview
Silicon MOS FETs (Small Signal) 2SK2211 Silicon N-Channel MOS FET Unit : mm For switching 2.
6±0.
1 4.
5±0.
1 1.
6±0.
2 1.
5±0.
1 • Low ON-resistance RDS(ON) • High-speed switching • Mini-power type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing.
45˚ 1.
0–0.
2 +0.
1 0.
4±0.
08 0.
5±0.
08 1.
5±0.
1 3.
0±0.
15 4.
0+0.
25 –0.
20 0.
4±0.
04 s Absolute Maximum Ratings Ta = 25°C Parameter Drain to Source voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature * 3 2 1 Symbol VDS VGSO ID IPD PD Pch Tstg Ratings 30 ±20 ±1 ±2 1 150 −55 to +150 Unit V V A A W °C °C marking 1: Gate 2: Drain 3: Source Mini-Power Type Package (3-pin) Marking Symbol: 2M Internal Connection D G Note) * PC board: Copper foil of the drain portion should have a area of 1 cm2 or more and the board thickness should be 1.
7 mm.
S s Electrical Characteristics Ta = 25°C Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate to Source voltage Gate threshold voltage Drain to Source ON-resistance * Symbol IDSS IGSS VDSS VGSS Vth RDS(ON)1 RDS(ON)2 Forward transfer admittance Input capacitance (Common Source) Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Turn-on time Fall time Turn-off time (delay time) Note) *: Pulse measurement Yfs Ciss Coss Crss tON tf tOFF VGS = 10 V, ID = 0.
5 A, VDD = 10 V RL = 10 Ω Conditions VDS = 25 V, VGS = 0 VGS = ±15 V, VDS = 0 ID = 0.
1 mA, VGS = 0 IGS = 0.
1 mA, VDS = 0 VDS = 5 V, ID = 1 mA VGS = 4 V, ID = 0.
5 A VGS = 10 V, ID = 0.
5 A VDS = 10 V, ID = 0.
5 A VDS = 10 V, VGS = 0, f = 1 MHz 0.
5 87 69 23 12 160 60 30 ±20 0.
8 0.
48 0.
35 2 0.
75 0.
6 Min Typ Max 10 ±10 Unit µA µA V V V Ω Ω S pF pF pF ns ns ns 2.
5±0.
1 s Features 0.
4 max.
1 2SK2211 ID  VDS 3.
0 Ta = 25°C 2.
5 2.
5 3.
0 Silicon MOS FETs (Small Signal) ID  VDS 1.
6 RDS  VDS Drain to source ON-resistance RDS(ON)...


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