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2SK2202

Hitachi Semiconductor
Part Number 2SK2202
Manufacturer Hitachi Semiconductor
Description Silicon N-Channel MOS FET
Published Mar 30, 2005
Detailed Description 2SK2202 Silicon N-Channel MOS FET ADE-208-089 A 2nd. Edition Application High speed power switching Features • • • • ...
Datasheet PDF File 2SK2202 PDF File

2SK2202
2SK2202

Overview
2SK2202 Silicon N-Channel MOS FET ADE-208-089 A 2nd.
Edition Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC-DC converter Outline TO-220FM D G 1 2 3 1.
Gate 2.
Drain 3.
Source S 2SK2202 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1.
PW ≤ 10 µs, duty cycle ≤ 1 % 2.
Value at Tc = 25 °C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 120 ±20 7 14 7 20 150 –55 to +150 Unit V V A A A W °C °C 2 2SK2202 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min 120 ±20 — — 1.
0 — — Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1.
Pulse Test |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 3.
0 — — — — — — — — — Typ — — — — — 0.
3 0.
35 5.
0 420 140 35 9 50 140 65 1.
35 320 Max — — ±10 250 2.
0 0.
4 0.
55 — — — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns I F = 7 A, VGS = 0 I F = 7 A, VGS = 0, diF / dt = 50 A / µs Test conditions I D = 10 mA, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 100 V, VGS = 0 I D = 1 mA, VDS = 10 V ID = 4 A VGS = 10 V*1 ID = 4 A VGS = 4 V*1 ID = 4 A VDS = 10 V*1 VDS = 10 V VGS = 0 f = 1 MHz ID = 4 A VGS = 10 V RL = 7.
5 Ω Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance VGS(off) RDS(on) 3 2SK2202 Power vs.
Temperature Derating 40 Pch (W) I D (A) 20 10 5 2 1 0.
5 0.
2 0.
1 0 50 100 150 Tc (°C) 200 2 ...


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