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2N3772

Part Number	2N3772
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 4, 2020
Detailed Description	isc Silicon NPN Power Transistor 2N3772 DESCRIPTION ·Excellent Safe Operating Area ·High DC Current Gain-hFE=15(Min)@I...
Datasheet	2N3772 PDF File

Overview

isc Silicon NPN Power Transistor 2N3772 DESCRIPTION ·Excellent Safe Operating Area ·High DC Current Gain-hFE=15(Min)@IC = 10A ·Low Saturation Voltage- : VCE(sat)= 1.
4V(Max)@ IC = 10A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation.
APPLICATIONS ·Designed for linear amplifiers, series pass regulators, and inductive switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEX Collector-Emitter Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 20 A ICM Collector Current-Peak 30 A IB Base Current-Continuous 5 A IBM Base Current-Peak 15 A PC Collector Power Dissipation @TC=25℃ 150 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.
17 ℃/W isc websi...

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