DatasheetsPDF.com

2N3792

Part Number	2N3792
Manufacturer	INCHANGE
Description	PNP Transistor
Published	Sep 4, 2020
Detailed Description	isc Silicon PNP Power Transistor INCHANGE Semiconductor 2N3792 DESCRIPTION ·Excellent Safe Operating Area ·Low Collect...
Datasheet	2N3792 PDF File

Overview

isc Silicon PNP Power Transistor INCHANGE Semiconductor 2N3792 DESCRIPTION ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation.
APPLICATIONS ·Designed for medium-speed switching and amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -10 A PC Collector Power Dissipation@TC=25℃ 150 W TJ Junction Temperature -65~200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.
17 ℃/W isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor INCHANGE Semiconductor 2N3792 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS)* Collector-Emitter Sustaining Voltage IC=-200mA; IB= 0 IEBO Emitter Cutoff Current VEB= -7V; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB=- 0.
5A VBE(ON)-1 Base-Emitter On Voltage IC=-5A; VCE=-2V VBE(ON)-2 Base-Emitter On Voltage IC=-10A; VCE=-4V hFE-1 DC Current Gain IC= -1A; VCE= -2V hFE-2 DC Current Gain IC= -3A; VCE= -2V fT Current Gain-Bandwidth Product *:Pulse test:Pulse width=300us,duty cycle≤2% IC= -0.
5A; VCE= -10V; f= 1.
0MHz MIN MAX UNIT -80 V -5 mA -1.
0 V -1.
8 V -4.
0 V 50 180 30 4 MHz Notice： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended for usage in general electronic equipment.
The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have appl...

Similar Datasheet

2N3700 Silicon Planar Epitaxial NPN transistor - STMicroelectronics
2N3700 Low Power Transistor - ON Semiconductor
2N3700 LOW POWER NPN SILICON TRANSISTOR - Microsemi Corporation
2N3700 SILICON NPN TRANSISTOR - TT
2N3700 Bipolar Transistor - Multicomp
2N3700 NPN Low Power Silicon Transistor - MA-COM
2N3700 NPN TRANSISTORS - Central Semiconductor
2N3700 NPN Low Power Silicon Transistor - VPT
2N3700 Silicon Planar Epitaxial Transistors - Comset Semiconductor
2N3700 NPN SILICON PLANAR EPITAXIAL TRANSISTORS - CDIL

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)