DatasheetsPDF.com

2SC5886A

Part Number	2SC5886A
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 5, 2020
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·High switching speed time ·Low collector-to-emitter saturation voltage ·F...
Datasheet	2SC5886A PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·High switching speed time ·Low collector-to-emitter saturation voltage ·Fast switching speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High-Speed Switching Applications ·DC/DC Converter Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 120 V 50 V 9 V IC Collector Current-Continuous ICM Collector Current-peak IB Base Current Collector Power Dissipation PC Ta=25℃ Collector Power Dissipation TC=25℃ TJ Junction Temperature 5 A 10 A 0.
5 A 1.
0 W 20 150...

Similar Datasheet

2SC5880 Power transistor - Rohm
2SC5881 Power transistor - Rohm
2SC5882 SILICON NPN EPITAXIAL TRANSISTOR - ETC
2SC5883 SMALL-SIGNAL TRANSISTOR - ISAHAYA
2SC5884 NPN Transistor - Panasonic Semiconductor
2SC5885 NPN Transistor - Panasonic Semiconductor
2SC5885 Silicon NPN transistor - BLUE ROCKET ELECTRONICS
2SC5885 Silicon NPN Power Transistor - Inchange Semiconductor Company Limited
2SC5886 NPN Transistor - Toshiba Semiconductor
2SC5886A NPN Transistor - INCHANGE

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)