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2SC5884

Panasonic Semiconductor
Part Number 2SC5884
Manufacturer Panasonic Semiconductor
Description NPN Transistor
Published Apr 3, 2005
Detailed Description Power Transistors 2SC5884 Silicon NPN triple diffusion mesa type Horizontal deflection output for TV Unit: mm 3.0±0.2...
Datasheet PDF File 2SC5884 PDF File

2SC5884
2SC5884

Overview
Power Transistors 2SC5884 Silicon NPN triple diffusion mesa type Horizontal deflection output for TV Unit: mm 3.
0±0.
2 ■ Features 9.
9±0.
3 4.
6±0.
2 2.
9±0.
2 15.
0±0.
3 8.
0±0.
2 1.
0±0.
1 • High breakdown voltage: VCBO ≥ 1 500 V • Wide safe operation area φ3.
2±0.
1 • Built-in dumper diode ■ Absolute Maximum Ratings TC = 25°C / Parameter Symbol Rating Unit 13.
7-+00.
.
25 2.
0±0.
2 4.
1±0.
2 Solder Dip 0.
76±0.
06 1.
45±0.
15 1.
2±0.
15 0.
75±0.
1 1.
25±0.
1 2.
6±0.
1 0.
7±0.
1 e Collector-base voltage (Emitter open) VCBO 1 500 V pe) Collector-emitter voltage (E-B short) VCES 1 500 V nc d ge.
ed ty Emitter-base voltage (Collector open) VEBO 5 V sta tinu Base current IB 2 A a e cycle iscon Collector current IC 4 A life d, d Peak collector current * ICP 6 A n u duct type Collector power dissipation PC 30 W te tin Pro ed Ta=25°C 2 four ntinu Junction temperature Tj 150 °C ing isco Storage temperature Tstg −55 to +150 °C ain oncludes fpoell,opwlaned d Note) *: Non-repetitive peak collector current 2.
54±0.
2 5.
08±0.
4 7° 1 2 3 1: Base 2: Collector 3: Emitter TO-220H Package Marking Symbol: C5884 Internal Connection C B E M isccontinueindteinnance ty ■ Electrical Characteristics TC = 25°C ± 3°C /Dis ma Parameter Symbol Conditions D ance type, Emitter-base voltage (Collector open) ten ce Forward voltage Main tenan Collector-base cutoff current (Emitter open) d main Forward current transfer ratio (plane Collector-emitter saturation voltage VEBO VF ICBO hFE VCE(sat) IE = 500 mA, IC = 0 IF = 2 A VCB = 1 000 V, IE = 0 VCB = 1 500 V, IE = 0 VCE = 5 V, IC = 2 A IC = 2 A, IB = 0.
5 A Min Typ Max Unit 5 V −2 V 50 µA 1 mA 5 10  2.
5 V Base-emitter saturation voltage VBE(sat) IC = 2 A, IB = 0.
5 A 1.
5 V Transition frequency fT VCE = 10 V, IC = 0.
1 A, f = 0.
5 MHz 3 MHz Storage time tstg IC = 2 A, Resistance loaded 5.
0 µs Fall time tf IB1 = 0.
5 A, IB2 = −1.
0 A 0.
5 µs Note) Measuring methods are based on JAPANESE INDUSTRIAL ST...


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