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2SC5881

Rohm
Part Number 2SC5881
Manufacturer Rohm
Description Power transistor
Published Jan 20, 2006
Detailed Description 2SC5881 Transistors Power transistor (60V, 5A) 2SC5881 zFeatures 1) High speed switching. (Tf : Typ. : 25ns at IC = 5A)...
Datasheet PDF File 2SC5881 PDF File

2SC5881
2SC5881


Overview
2SC5881 Transistors Power transistor (60V, 5A) 2SC5881 zFeatures 1) High speed switching.
(Tf : Typ.
: 25ns at IC = 5A) 2) Low saturation voltage, typically (Typ.
: 200mV at IC = 3.
0A, IB = 300mA) 3) Strong discharge power for inductive load and capacitance load.
4) Complements the 2SA2096 zExternal dimensions (Unit : mm) (SC-63) (1) 2.
3 0.
9 0.
75 CPT3 (2) 5.
5 1.
5 5.
1 0.
9 (3) (1) Base (2) Collector (3) Emitter 0.
65 2.
3 C0.
5 1.
0 0.
5 0.
8Min.
1.
5 2.
5 9.
5 0.
5 2.
3 Each lead has same dimensions Symbol : C5881 zApplications Low frequency amplifier High speed switching zStructure NPN Silicon epitaxial planar transistor zPackaging specifications Package Type Taping TL 2500 Code Basic ordering unit (pieces) 2SC5881 zAbsolute maximum ratings (Ta=25°C) Parameter Symbol VCBO VCES Limits 100 100 60 6.
5 5.
0 10.
0 1.
0 10.
0 Unit V V V V A A W W °C °C ∗1 ∗2 ∗3 Collector-base voltage Collector-emitter voltage Emitter-base voltage DC VCEO VEBO IC ICP PC Collector current Pulsed Power dissipation Junction temperature Range of storage temperature ∗1 Pw=10ms, non repetitive pulse ∗2 Ta=25°C ∗3 Tc=25°C Tj Tstg 150 −55 to 150 Rev.
B 6.
5 (x1 / 2) 1/3 2SC5881 Transistors zElectrical characteristics (Ta=25°C) Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage DC current gain Symbol BVCEO BVCES BVCBO BVEBO ICBO IEBO Min.
60 100 100 6.
5 − − Typ.
− − − − − − Max.
− − − − 1.
0 1.
0 Unit V V V V µA µA VCE (sat) hFE − 120 200 400 390 mV − − − Transition frequency fT − 160 MHz − Corrector output capacitance Turn-on time Storage time Fall time Cob Ton Tstg Tf − − − − 30 70 150 25 pF − − − ns ns ns Condition IC=1mA IC=100µA IC=100µA IE=100µA VCB=40V VEB=4V IC=3.
0A IB=300mA VCE=2V IC=100mA VCE=10V IE= −100mA f=10MHz VCB=10V IE=0mA f=1MHz IC=5A IB1=500mA IB2= −500mA VCC 25V ∗1 ∗1 ∗2 ∗1 Non...


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