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BD643F

Part Number	BD643F
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 6, 2020
Detailed Description	isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor BD643F DESCRIPTION ·High DC Current Gain ·Low Satur...
Datasheet	BD643F PDF File

Overview

isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor BD643F DESCRIPTION ·High DC Current Gain ·Low Saturation Voltage ·Complement to Type BD644F ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A ICP Collector Current-Peak 12 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Ju...

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