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BD645F

Part Number	BD645F
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 6, 2020
Detailed Description	isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor BD645F DESCRIPTION ·High DC Current Gain ·Low Satur...
Datasheet	BD645F PDF File

Overview

isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor BD645F DESCRIPTION ·High DC Current Gain ·Low Saturation Voltage ·Complement to Type BD646F ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A ICP Collector Current-Peak 12 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.
15 A 20 W 32 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.
6 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 6.
25 ℃/W isc website：www.
iscsemi.
com 1 isc & iscsemi...

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