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BD647F

Part Number	BD647F
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 6, 2020
Detailed Description	isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor BD647F DESCRIPTION ·High DC Current Gain ·Low Satur...
Datasheet	BD647F PDF File

Overview

isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor BD647F DESCRIPTION ·High DC Current Gain ·Low Saturation Voltage ·Complement to Type BD648F ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A ICP Collector Current-Peak 12 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ J...

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