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BD649F

Part Number	BD649F
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 6, 2020
Detailed Description	isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor BD649F DESCRIPTION ·High DC Current Gain ·Low Satur...
Datasheet	BD649F PDF File

Overview

isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor BD649F DESCRIPTION ·High DC Current Gain ·Low Saturation Voltage ·Complement to Type BD650F ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A ICP Collector Current-Peak 12 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ ...

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