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BDV64

INCHANGE
Part Number BDV64
Manufacturer INCHANGE
Description PNP Transistor
Published Sep 7, 2020
Detailed Description isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector Current -IC= -12A ·Collector-Emitter Saturation Volt...
Datasheet PDF File BDV64 PDF File

BDV64
BDV64

Overview
isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector Current -IC= -12A ·Collector-Emitter Saturation Voltage- : VCE(sat)= -2.
0V(Max.
)@ IC= -5A ·Complement to Type BDV65/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BDV64 -60 VCBO Collector-Base Voltage BDV64A BDV64B -80 -100 BDV64C -120 BDV64 -60 VCEO Collector-Emitter Voltage BDV64A BDV64B -80 -100 BDV64C -120 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -12 ICM Collector Current-Peak -20 IB Base Current-Continuous -0.
5 Collector Power Dissipation PC @ TC=25℃ Collector Power Dissipation @ Ta=25℃ 125 3.
5 TJ Junction Temperature 150 Tstg Storage Temperature Range -65~150 UNIT V V V A A A W ℃ ℃ BDV64/A/B/C isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case Rth j-a Thermal Resistance,Junction to Ambient MAX UNIT 1.
0 ℃/W 35.
7 ℃/W ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDV64 V(BR)CEO Collector-Emitter Breakdown Voltage BDV64A BDV64B IC= -30mA; IB= 0 BDV64C VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -20mA VBE(on) Base-Emitter On Voltage ICEO Collector Cutoff Current IC= -5A; VCE= -4V VCE= 1/2VCEOmax; IB= 0 BDV64 VCB= -40V; IE= 0;TJ= 150℃ BDV64A VCB= -50V; IE= 0;TJ= 150℃ ICBO Collector Cutoff Current BDV64B VCB= -60V; IE= 0;TJ= 150℃ BDV64C VCB= -70V; IE= 0;TJ= 150℃ ICBO Collector Cutoff Current VCB= VCBOmax; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE DC Current Gain IC= -5A; VCE= -4V BDV64/A/B/C MIN TYP.
MAX UNIT -60 -80 V -100 -120 -2.
0 V -2.
5 V -2.
0 mA -2.
0 mA 1000 -0.
4 mA -5 mA isc websit...


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