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BDV64

Comset Semiconductors
Part Number BDV64
Manufacturer Comset Semiconductors
Description Silicon PNP Darlington Power Transistor
Published Dec 10, 2012
Detailed Description BDV64-A-B-C PNP SILICON DARLINGTONS POWER TRANSISTORS They are silicon epitaxial base transistors mounted in TO-3PN. The...
Datasheet PDF File BDV64 PDF File

BDV64
BDV64

Overview
BDV64-A-B-C PNP SILICON DARLINGTONS POWER TRANSISTORS They are silicon epitaxial base transistors mounted in TO-3PN.
Theyare designed for audio output stages and general amplifier and switching applications.
complementary is BDV65-A-B-C Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS Symbol VCEO Ratings Collector-Emitter Voltage BDV64 BDV64A BDV64B BDV64C BDV64 BDV64A BDV64B BDV64C BDV64 BDV64A BDV64B BDV64C BDV64 BDV64A BDV64B BDV64C BDV64 BDV64A BDV64B BDV64C BDV64 BDV64A BDV64B BDV64C Value -60 -80 -100 -120 -60 -80 -100 -120 -5.
0 Unit V VCBO Collector-Base Voltage www.
DataSheet.
net/ V VEBO Emitter-Base Voltage V IC Collector Current -12 A -15 ICM Collector Peak Current IB Base Current -0.
5 A 26/09/2012 COMSET SEMICONDUCTORS 1/4 Datasheet pdf - http://www.
DataSheet4U.
co.
kr/ BDV64-A-B-C ABSOLUTE MAXIMUM RATINGS Symbol Ratings Tmb = 25° C BDV64 BDV64A BDV64B BDV64C BDV64 BDV64A BDV64B BDV64C BDV64 BDV64A BDV64B BDV64C BDV64 BDV64A BDV64B BDV64C Value 125 Unit PT Power Dissipation Tmb = 25° C W 3.
5 TJ Junction Temperature 150 °C -65 to +150 TS Storage Temperature www.
DataSheet.
net/ THERMAL CHARACTERISTICS Symbol Rthj-c Ratings Thermal Resistance, Junction to Case BDV64 BDV64A BDV64B BDV64C BDV64 BDV64A BDV64B BDV64C Value 1 Unit °C / W 35.
7 Rthj-a Thermal Resistance, Junction to Ambient 26/09/2012 COMSET SEMICONDUCTORS 2/4 Datasheet pdf - http://www.
DataSheet4U.
co.
kr/ BDV64-A-B-C ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Collector Cutoff Current Test Condition(s) VCE= -30 V, IB= 0 VCE= -40 V, IB= 0 VCE= -50 V, IB= 0 VCE= -60 V, IB= 0 VBE= -5 V, IC= 0 VCB= -60 V VCB= -80 V VCB= -100 V VCB= -120 V VCB= -30 V VCB= -40 V VCB= -50 V VCB= -60 V www.
DataSheet.
net/ Min Typ Max Unit ICEO IEBO Emitter Cutoff Current IE= 0 Tj=25°C ICBO Collector Cutoff Current IE= 0 Tj=150°C VCEO Collector-Emitter I = -30 mA, IB = 0 Breakdown Voltage (*) C hFE DC Current Gain (*) VCE= -4 V, IC= -5 A VCE...


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