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BDV64

SavantIC
Part Number BDV64
Manufacturer SavantIC
Description SILICON POWER TRANSISTOR
Published May 10, 2009
Detailed Description SavantIC Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION ·With TO-3PN package www.datash...
Datasheet PDF File BDV64 PDF File

BDV64
BDV64

Overview
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION ·With TO-3PN package www.
datasheet4u.
com ·Complement to type BDV65/65A/65B/65C ·DARLINGTON ·High DC current gain APPLICATIONS ·For use in general purpose amplifier applications.
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION BDV64/64A/64B/64C Fig.
1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER BDV64 VCBO Collector-base voltage BDV64A BDV64B BDV64C BDV64 VCEO Collector-emitter voltage BDV64A BDV64B BDV64C VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 Ta=25 Open collector Open base Open emitter CONDITIONS VALUE -60 -80 -100 -120 -60 -80 -100 -120 -5 -12 -15 -0.
5 125 3.
5 150 -65~150 V A A A W V V UNIT SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER BDV64 Collector-emitter breakdown voltage BDV64A IC=-30mA, IB=0 BDV64B BDV64C VCEsat VBE Collector-emitter saturation voltage Base-emitter on voltage BDV64 Collector cut-off current BDV64A BDV64B BDV64C BDV64 Collector cut-off current BDV64A BDV64B BDV64C IEBO hFE VEC Emitter cut-off current DC current gain Diode forward voltage IC=-5A ,IB=-20mA IC=-5A ; VCE=-4V VCB=-60V, IE=0 VCB=-30V, IE=0;TC=150 VCB=-80V, IE=0 VCB=-40V, IE=0;TC=150 VCB=-100V, IE=0 VCB=-50V, IE=0;TC=150 VCB=-120V, IE=0 VCB=-60V, IE=0;TC=150 VCE=-30V, IB=0 VCE=-40V, IB=0 CONDITIONS www.
datasheet4u.
com BDV64/64A/64B/64C SYMBOL MIN -60 -80 TYP.
MAX UNIT V(BR)CEO V -100 -120 -2.
0 -2.
5 -0.
4 -2.
0 -0.
4 -2.
0 -0.
4 -2.
0 -0.
4 -2.
0 mA V V ICBO ICEO -2 VCE=-50V, IB=0 VCE=-60V, IB=0 VEB=-5V; IC=0 IC=-5A ; VCE=-4V IE=-10A 1000 -3.
5 -5 mA mA V THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 1.
0 UNIT /W 2 SavantIC Semiconductor Product...


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