DatasheetsPDF.com

MJE371

Part Number	MJE371
Manufacturer	INCHANGE
Description	PNP Transistor
Published	Sep 18, 2020
Detailed Description	isc Silicon PNP Power Transistor MJE371 DESCRIPTION ·Collector–Emitter Sustaining Voltage— : VCEO(SUS) = -40V ·DC Curr...
Datasheet	MJE371 PDF File

Overview

...ent Gain— : hFE = 40(Min) @ IC= -1A ·Complement to Type MJE521 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general-purpose amplifier and switching circuits.
·Recommended for use in 5~20 Watt audio amplifiers utilizing complementary symmetry circuitry.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -4 V IC Collector Current-Continuous -4 A ICM Collector Current-peak -8 A IB Base Current PC Collector Power Dissipation TC=25℃ Ti Junction Temperature -2 A 40 W 150 ℃ Tstg Sto...

Similar Datasheet

MJE3055 NPN SILICON POWER TRANSISTOR - DIGITRON
MJE3055 NPN Transistor - INCHANGE
MJE3055 NPN Silicon Transistor - Fairchild
MJE3055 COMPLEMENTARY SILICON POWER TRANSISTORS - ST Microelectronics
MJE3055 COMPLEMENTARY SILICON POWER TRANSISTORS - ON
MJE3055 Plastic-Encapsulate Transistors - GME
MJE3055 (MJE2955 / MJE3055) POWER TRANSISTORS - Motorola
MJE3055 NPN Transistor - JIANGSU CHANGJIANG ELECTRONICS
MJE3055A Complementary Silicon power transistors - nELL
MJE3055AT Silicon NPN Power Transistor - Inchange Semiconductor

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)