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2SB1658

Part Number	2SB1658
Manufacturer	INCHANGE
Description	PNP Transistor
Published	Sep 18, 2020
Detailed Description	isc Silicon PNP Power Transistor DESCRIPTION ·High Collector Current -IC= -5A ·High DC Current Gain- : hFE= 150~600@IC=...
Datasheet	2SB1658 PDF File

Overview

isc Silicon PNP Power Transistor DESCRIPTION ·High Collector Current -IC= -5A ·High DC Current Gain- : hFE= 150~600@IC= -1A ·Low-Collector Saturation Voltage- : VCE(sat)= -0.
15V(Max.
)@IC= -1A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -5 A ICP Collector Current-Pulse -10 A IB Base Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Pow...

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