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2SD1212

Part Number	2SD1212
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 21, 2020
Detailed Description	isc Silicon NPN Power Transistor 2SD1212 DESCRIPTION ·High Collector Current:: IC= 12A ·Low Collector Saturation Volta...
Datasheet	2SD1212 PDF File

Overview

isc Silicon NPN Power Transistor 2SD1212 DESCRIPTION ·High Collector Current:: IC= 12A ·Low Collector Saturation Voltage : VCE(sat)= 0.
4V(Max)@IC= 5A ·Complement to Type 2SB903 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for relay drivers, high-speed inverters, converters, and other general large-current switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 12 A ICM Collector Current-Peak Total Power Dissipation @ TC=25℃ PC Total Power Dissipation...

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