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2SD1235

Part Number	2SD1235
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 21, 2020
Detailed Description	isc Silicon NPN Power Transistors 2SD1235 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.4V(Max)@ IC= 3A ...
Datasheet	2SD1235 PDF File

Overview

isc Silicon NPN Power Transistors 2SD1235 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.
4V(Max)@ IC= 3A ·Large Current Capacity ·Complement to Type 2SB919 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Large current switching of relay drivers, high-speed inverters,converters.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 8 A ICP Collector Current-Pulse Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 15 ...

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