DatasheetsPDF.com

BUX11

Part Number	BUX11
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 25, 2020
Detailed Description	isc Silicon NPN Power Transistor BUX11 DESCRIPTION ·Low Collector Saturation Voltage·High Switching Speed ·High Curren...
Datasheet	BUX11 PDF File

Overview

isc Silicon NPN Power Transistor BUX11 DESCRIPTION ·Low Collector Saturation Voltage·High Switching Speed ·High Current Current Capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Motor control ·Linear and switching industrial equipment Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCBO VCEX VCEO Collector-Base Voltage Collector-Emitter Voltage VBE= -1.
5V Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range VALUE UNIT 250 V 250 V 200 V 7 V 20 A 25 A 4 A 150 W 200 ℃ -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.
17 ℃/W isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BUX11 ELECTRICAL CHARACTE...

Similar Datasheet

BUX10 HIGH POWER NPN SILICON TRANSISTOR - STMicroelectronics
BUX10 SILICON POWER TRANSISTOR - SavantIC
BUX10 Silicon NPN Transistor - NTE
BUX10 SILICON MULTI-EPITAXIAL NPN TRANSISTOR - Semelab
BUX10 NPN Transistor - INCHANGE
BUX10A Silicon NPN Power Transistor - Inchange Semiconductor
BUX10P Silicon NPN Power Transistor - Inchange Semiconductor
BUX10X NPN MULTI - EPITAXIAL POWER TRANSISTOR - Seme LAB
BUX11 SILICON POWER TRANSISTOR - SavantIC
BUX11 SILICON MULTI-EPITAXIAL NPN TRANSISTOR - Seme lab

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)