DatasheetsPDF.com

BUX80

Part Number	BUX80
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 25, 2020
Detailed Description	isc Silicon NPN Power Transistors DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min) ·High Switc...
Datasheet	BUX80 PDF File

Overview

isc Silicon NPN Power Transistors DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·Motor control ·High frequency and efficiency converters ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage VBE= 0 800 V VCEO Collector-Emitter Voltage 400 V VCER Collector-Emitter Voltage RBE= 50Ω 500 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 15 A IB Base Current-Continuous 5 A PC Collector Power Dissipation @TC=25℃ 100 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.
1 ℃/W BUX80 isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ...

Similar Datasheet

BUX10 HIGH POWER NPN SILICON TRANSISTOR - STMicroelectronics
BUX10 SILICON POWER TRANSISTOR - SavantIC
BUX10 Silicon NPN Transistor - NTE
BUX10 SILICON MULTI-EPITAXIAL NPN TRANSISTOR - Semelab
BUX10 NPN Transistor - INCHANGE
BUX10A Silicon NPN Power Transistor - Inchange Semiconductor
BUX10P Silicon NPN Power Transistor - Inchange Semiconductor
BUX10X NPN MULTI - EPITAXIAL POWER TRANSISTOR - Seme LAB
BUX11 SILICON POWER TRANSISTOR - SavantIC
BUX11 SILICON MULTI-EPITAXIAL NPN TRANSISTOR - Seme lab

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)