DatasheetsPDF.com

2SD632

INCHANGE
Part Number 2SD632
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 29, 2020
Detailed Description isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD632 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VC...
Datasheet PDF File 2SD632 PDF File

2SD632
2SD632


Overview
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD632 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 300V(Min) ·Excellent Safe Operating Area ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for line operated audio output amplifier,and switching power supply drivers applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 350 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2.
5 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Tempe...



Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)