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2SD1892

INCHANGE
Part Number 2SD1892
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 30, 2020
Detailed Description INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1892 DESCRIPTION ·Collector-Emitter Breakdown V...
Datasheet PDF File 2SD1892 PDF File

2SD1892
2SD1892

Overview
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1892 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High DC Current Gain : hFE= 5000(Min) @IC= 4A ·Low Collector Saturation Voltgae- : VCE(sat)= 2.
5V(Max.
)@ IC= 4A ·Complement to Type 2SB1252 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For power amplification ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A ICP Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 8 A 2 W 45 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1892 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 4mA VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 4mA ICBO Collector Cutoff Current VCB= 120V; IE= 0 ICEO Collector Cutoff current VCE= 100V,IB= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 1A; VCE= 5V hFE-2 DC Current Gain IC= 4A; VCE= 5V fT Current-Gain—Bandwidth Product IC= 0.
5A; VCE= 10V Switching times ton Turn-on Time tstg Storage Time IC= 4A, IB1= IB2= 4mA tf Fall Time MIN TYP.
MAX UNIT 100 V 120 V 2.
5 V 3.
0 V 100 μA 100 μA 3.
0 mA 2000 5000 30000 20 MHz 2.
5 μs 3.
5 μs 1.
0 μs  hFE-2Classifications Q P 5000-15000 8000-30000 isc website：www.
iscsemi.
com 2 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor 2SD189...


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