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2SD2296

Part Number	2SD2296
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 30, 2020
Detailed Description	isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD2296 DESCRIPTION ·High Breakdown Voltage : VCBO= 1500V(Min)...
Datasheet	2SD2296 PDF File

Overview

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD2296 DESCRIPTION ·High Breakdown Voltage : VCBO= 1500V(Min) ·High Switching Speed ·With TO-3PN Package ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for color TV horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 8 A 50 W 150 ℃ Tstg Storage Temperature Range -55...

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