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BD286

Part Number	BD286
Manufacturer	INCHANGE
Description	PNP Transistor
Published	Sep 30, 2020
Detailed Description	isc Silicon PNP Power Transistor INCHANGE Semiconductor BD286 DESCRIPTION ·Collector-Emitter Sustaining Voltage - : VC...
Datasheet	BD286 PDF File

Overview

isc Silicon PNP Power Transistor INCHANGE Semiconductor BD286 DESCRIPTION ·Collector-Emitter Sustaining Voltage - : VCEO(SUS)= -45V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= -0.
6V(Max)@ IC = -2A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium power linear and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -45 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A ICM Collector Current-Pulse -6 A IB Base Current-Continuous PC Collector Powe...

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