DatasheetsPDF.com

2SK2611

Part Number	2SK2611
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Sep 30, 2020
Detailed Description	isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=9A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Fas...
Datasheet	2SK2611 PDF File

Overview

isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=9A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·low on–resistance.
·High speed switching.
·No secondary breakdown.
·Suitable for switchingregulator, DC–DC control.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 900 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 9 A IDM Drain Current-Single Plused 27 A Ptot Total Dissipation@TC=25℃ 150 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range ...

Similar Datasheet

2SK260 N-Channel MOSFET Transistor - Inchange Semiconductor
2SK2601 N-Channel MOSFET - Toshiba Semiconductor
2SK2601 N-Channel MOSFET - INCHANGE
2SK2602 Silicon N-Channel MOSFET - Toshiba Semiconductor
2SK2603 Silicon N-Channel MOSFET - Toshiba Semiconductor
2SK2604 Silicon N-Channel MOSFET - Toshiba Semiconductor
2SK2605 Silicon N-Channel MOSFET - Toshiba Semiconductor
2SK2606 Silicon N-Channel MOSFET - Toshiba Semiconductor
2SK2607 Silicon N-Channel MOSFET - Toshiba Semiconductor
2SK2608 N-Channel MOSFET - Toshiba Semiconductor

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)