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2SK2608

INCHANGE
Part Number 2SK2608
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 8, 2020
Detailed Description isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤3.78Ω(TYP) ·Enhancement mode ·Fa...
Datasheet PDF File 2SK2608 PDF File

2SK2608
2SK2608

Overview
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤3.
78Ω(TYP) ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION · Efficient and reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 900 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 3 IDM Drain Current-Single Pulsed 9 PD Total Dissipation @TC=25℃ 100 Tj Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 1.
25 83.
3 UNIT ℃/W ℃/W 2SK2608 isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID =10mA VGS(th) Gate Threshold Voltage VDS=VGS; ID =1mA RDS(on) Drain-Source On-Resistance VGS=10V; ID=1.
5A IGSS Gate-Source Leakage Current VGS= ±30V IDSS Drain-Source Leakage Current VDS=720V; VGS= 0V VSD Diode forward voltage IF=3A; VGS = 0V 2SK2608 MIN TYP MAX UNIT 900 V 2 4 V 4.
3 Ω 10 μA 100 μA 1.
9 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended for usage in general electronic equipment.
The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.
Please contact us if you intend our products to be used in these special app...


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