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IRFP4668

Part Number	IRFP4668
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Oct 12, 2020
Detailed Description	isc N-Channel MOSFET Transistor IRFP4668，IIRFP4668 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤9.7mΩ ·Enhanc...
Datasheet	IRFP4668 PDF File

Overview

isc N-Channel MOSFET Transistor IRFP4668，IIRFP4668 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤9.
7mΩ ·Enhancement mode: Vth =3.
0 to 5.
0 V (VDS=VGS, ID=250μA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Efficiency Synchronous Rectification in SMPS ·Uninterruptible Power Supply ·High Speed Power Switching ·Hard Switched And High Frequency Circuits ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 200 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 130 IDM Drain Current-Single Pulsed 520 PD Total Dissipation @TC=25℃ 520 Tj Max.
Operating Jun...

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