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IRFP460A

International Rectifier
Part Number IRFP460A
Manufacturer International Rectifier
Description Power MOSFET
Published Sep 11, 2005
Detailed Description PD- 91880 SMPS MOSFET IRFP460A HEXFET® Power MOSFET Applications Switch Mode Power Supply ( SMPS ) l Uninterruptable ...
Datasheet PDF File IRFP460A PDF File

IRFP460A
IRFP460A

Overview
PD- 91880 SMPS MOSFET IRFP460A HEXFET® Power MOSFET Applications Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching l VDSS 500V Rds(on) max 0.
27Ω ID 20A Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Effective Coss specified ( See AN1001) l TO-247AC G D S Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw Max.
20 13 80 280 2.
2 ± 30 3.
8 -55 to + 150 300 (1.
6mm from case ) 10 lbf•in (1.
1N•m) Units A W W/°C V V/ns °C Typical SMPS Topologies: l l Full Bridge PFC Boost Notes  through … are on page 8 www.
irf.
com 1 6/23/99 IRFP460A Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp.
Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min.
Typ.
Max.
Units Conditions 500 ––– ––– V VGS = 0V, I D = 250µA ––– 0.
61 ––– V/°C Reference to 25°C, ID = 1mA ––– ––– 0.
27 Ω VGS = 10V, ID = 12A „ 2.
0 ––– 4.
0 V VDS = VGS , ID = 250µA ––– ––– 25 VDS = 500V, VGS = 0V µA ––– ––– 250 VDS = 400V, VGS = 0V, T J = 125°C ––– ––– 100 VGS = 30V nA ––– ––– -100 VGS = -30V Dynamic @ TJ = 25°C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff.
Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time ...


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