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IRFP460

ST Microelectronics
Part Number IRFP460
Manufacturer ST Microelectronics
Description N-Channel Power MOSFET
Published Sep 11, 2005
Detailed Description IRFP460 N-CHANNEL 500V - 0.22Ω - 18.4A TO-247 PowerMesh™II MOSFET TYPE VDSS RDS(on) ID IRFP460 500V < 0.27Ω 18.4A ...
Datasheet PDF File IRFP460 PDF File

IRFP460
IRFP460

Overview
IRFP460 N-CHANNEL 500V - 0.
22Ω - 18.
4A TO-247 PowerMesh™II MOSFET TYPE VDSS RDS(on) ID IRFP460 500V < 0.
27Ω 18.
4A s TYPICAL RDS(on) = 0.
22Ω s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED s NEW HIGH VOLTAGE BENCHMARK s GATE CHARGE MINIMIZED DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™.
The layout re- finements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.
3 2 1 TO-247 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s SWITH MODE LOW POWER SUPPLIES (SMPS) s HIGH CURRENT, HIGH SPEED SWITCHING s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVES ABSOLUTE MAXIMUM RATINGS Symbol Parameter VDS Drain-source Voltage (VGS = 0) VDGR Drain-gate Voltage (RGS = 20 kΩ) VGS Gate- source Voltage ID Drain Current (continuos) at TC = 25°C ID Drain Current (continuos) at TC = 100°C IDM (q...


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